MIO1200-33E11

Advanced Technical Information MIO 1200-33E11 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1200 A VCES = 3300 V VCE(sat) typ. = 3.1 V CC C C' 5 7 9 3 G 2 E' 1 EE E 46 8 phase-out IGBT Symbol VCES VGES IC80 ICM tSC Conditions VGE = 0 V TC = 80°C tp = 1 ms; TC = 80°C VCC = 2500 V; VCEM CHIP = < 3300 V; VGE < 15 V; TVJ < 125°C Maximum Ratings 3300 V ± 20 V 1200 A 2400 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) ① IC = 1200 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 240 mA; VCE = VGE ICES VCE = 3300 V; VGE = 0 V; TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C Eon Inductive load; TVJ = 125°C; VGE = ±15 V; Eoff VCC = 1800V; IC = 1200A; RG = 1Ω; Lσ = 100nH RthJC ① Collector emitter saturation voltage is given at chip level 3.1 V 3.8 V 6 8V 120 mA 500 nA 1750 2000 mJ mJ 0.0085 K/W Features NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical Applications AC power converters for - industrial drives - windmills - traction LASER pulse generator 405 IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 1-3 phase-out Advanced Technical Information Diode Symbol IF80 IFSM Conditions Maximum Ratings TC = 80°C V...