Document
IGBT Module Sixpack
Short Circuit SOA Capability Square RBSOA
Preliminary data
Part name (Marking on product)
MWI15-12A6K
10, 23
14 8
13 NTC
7 6
5 9, 24
18 17
4 3
22 21
2 1
MWI 15-12A6K IC25 = 19 A VCES = 1200 V VCE(sat) typ. = 3.0 V
11, 12 15, 16 19, 20
E72873 Pin configuration see outlines.
Features:
• NPT IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits • HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current • Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate
Application:
• AC drives • UPS • Welding
IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved
Package: • UL registered • Industry standard E1-pack
20071113a
-4
MWI 15-12A6K
IGBTs
Symbol
VCES VGES VGEM IC25 IC80 Ptot VCE(sat)
Definitions collector emitter voltage max. DC gate voltage max. transient collector gate voltage collector current
total power dissipation collector emitter saturation voltage
VGE(th) ICES
gate emitter threshold voltage collector emitter leakage current
IGES Cies QG(on) td(on) tr td(off) tf Eon Eoff ICM
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse
reverse bias safe operating area
tSC (SCSOA) RthJC RthCH
short circuit safe operating area
thermal resistance junction to case thermal resistance case to heatsink
Conditions
continuous transient
TVJ = 25°C to 150°C
TC = 25°C TC = 80°C
TC = 25°C
IC = 15 A; VGE = 15 V
TVJ = 25°C TVJ = 125°C
IC = 0.35 mA; VGE = VCE
TVJ = 25°C
VCE = VCES; VGE = 0 V
TVJ = 25°C TVJ = 125°C
VCE = 0 V; VGE = ±20 V
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 10 A
min. 4.5
inductive load VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 82 W
TVJ = 125°C
RBSOA; VGE = ±15 V; RG = 82 W L = 100 µH; clamped induct. load TVJ = 125°C VCEmax = VCES - LS·di/dt
VCE = 1200 V; VGE = ±15 V; RG = 82 W; non-repetitive
TVJ = 125°C
(per IGBT)
(per IGBT)
Ratings
typ. max.
1200
±20 ±30
19 13
90
3.0 3.4 3.5
6.5
0.9 0.8
100
600
45
50 40 290 60 1.2 1.1
30
Unit
V
V V
A A
W
V V
V
mA mA
nA
pF
nC
ns ns ns ns mJ mJ
A
10 µs
1.37 K/W 0.5 K/W
Diodes
Symbol VRRM IF25 IF80 VF
Definitions max. repetitve reverse voltage forward current
forward voltage
IRM trr Erec(off) RthJC RthCH
max. reverse recovery current reverse recovery time reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
Conditions IF = 15 A; VGE = 0 V VR = 600 V diF /dt = -400 A/µs IF = 15 A; VGE = 0 V (per diode) (per diode)
TVJ = 150°C TC = 25°C TC = 80°C TVJ = 25°C TVJ = 125°C
TVJ = 125°C
min.
Ratings
typ. max.
1200
24 16
2.4 2.7 1.7
16 .