MWI225-12E9

MWI 225-12 E9 phase-out IGBT Modules Sixpack NPT3 IGBT 15 28 16 17 29 13 14 2 20 21 22 11/12 18 19 1 4 25 26 27 9/10 23 24 3 6 7/8 5 IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot Conditions TVJ = 25°C to 125°C TC = 25°C TC = 80°C RG = 5 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 5 Ω TVJ = 125°C; non-repetitive; VCEmax < VCES TC = 25°C Maximum Ratings 1200 V ± 20 V 355 250 ICM = 500 VCEK < VCES 10 A A A µs 1.4 kW Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 225 A; VGE = 15 V IC = 8 mA; VGE = VCE VCE = VCES; VGE = 0 V VCE = 0 V; VGE = ± 20 V TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C Inductive load, TVJ = 125°C VCE = 600 V; IC = 200 A VGE = ±15 V; RG = 3.6 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 300 A 2.1 2.4 4.5 1 180 100 650 120 13 21 14 1.5 2.5 V 2.9 V 6.5 V 1 mA 8 mA 400 nA ns ns ns ns mJ mJ nF µC 0.09 K/W IC80 = 250 A VCES = 1200 V VCE(sat) typ. = 2.1 V See outline drawing for pin arrangement Features NPT3 IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate Advantages space s...