IGBT Module
MWI 50-06 A7 MWI 50-06 A7T
IGBT Modules Sixpack
Short Circuit SOA Capability Square RBSOA
Type:
MWI 50-06 A7 MWI 50-06...
Description
MWI 50-06 A7 MWI 50-06 A7T
IGBT Modules Sixpack
Short Circuit SOA Capability Square RBSOA
Type:
MWI 50-06 A7 MWI 50-06 A7T
NTC - Option:
without NTC with NTC
13
1 2
3 4 17
IC25 = 72 A
V CES
= 600 V
VCE(sat) typ. = 1.9 V
59 6 10
7 11 8 12
T
16 15 14
NTC
T E72873
See outline drawing for pin arrangement
IGBTs
Symbol VCES VGES IC25 IC80 RBSOA
t SC
(SCSOA) Ptot
Symbol
VCE(sat)
V GE(th)
ICES
IGES t
d(on)
tr td(off) tf Eon Eoff Cies QGon R
thJC
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600 V ± 20 V
TC = 25°C TC = 80°C
72 50
VGE = ±15 V; RG = 22 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH
ICM = 100 VCEK ≤ VCES
V CE
=
V; CES
VGE
=
±15
V;
R G
=
22
Ω;
TVJ
=
125°C
non-repetitive
10
A A A
µs
TC = 25°C
225 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified) min. typ. max.
IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
I = 1 mA; V = V
C GE CE
VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C VCE = 300 V; IC = 50 A VGE = ±15 V; RG = 22 Ω
1.9 2.4 V 2.2 V
4.5 6.5 V
0.6 mA 0.7 mA
200 nA
50 ns 60 ns 300 ns 30 ns 2.3 mJ 1.7 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 50 A
(per IGBT)
2800 120
pF nC
0.55 K/W
Features
● NPT IGBT technology ● low saturation voltage ● low switching losses ● switching frequency up to 30 kHz ● square RBSOA, no latch up ● high short circuit capability ● positive temperature coefficient for
easy parallelling ● MOS input, vo...
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