MWI50-06A7T

MWI 50-06 A7 MWI 50-06 A7T IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA Type: MWI 50-06 A7 MWI 50-06 A7T NTC - Option: without NTC with NTC 13 1 2 3 4 17 IC25 = 72 A V CES = 600 V VCE(sat) typ. = 1.9 V 59 6 10 7 11 8 12 T 16 15 14 NTC T E72873 See outline drawing for pin arrangement IGBTs Symbol VCES VGES IC25 IC80 RBSOA t SC (SCSOA) Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC Conditions Maximum Ratings TVJ = 25°C to 150°C 600 V ± 20 V TC = 25°C TC = 80°C 72 50 VGE = ±15 V; RG = 22 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH ICM = 100 VCEK ≤ VCES V CE = V; CES VGE = ±15 V; R G = 22 Ω; TVJ = 125°C non-repetitive 10 A A A µs TC = 25°C 225 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C I = 1 mA; V = V C GE CE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 300 V; IC = 50 A VGE = ±15 V; RG = 22 Ω 1.9 2.4 V 2.2 V 4.5 6.5 V 0.6 mA 0.7 mA 200 nA 50 ns 60 ns 300 ns 30 ns 2.3 mJ 1.7 mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 50 A (per IGBT) 2800 120 pF nC 0.55 K/W Features ● NPT IGBT technology ● low saturation voltage ● low switching losses ● switching frequency up to 30 kHz ● square RBSOA, no latch up ● high short circuit capability ● positive temperature coefficient for easy parallelling ● MOS input, vo...