AOL1718
30V N-Channel MOSFET
SRFET TM
General Description
SRFETTM AOL1718 uses advanced trench technology with a monoli...
AOL1718
30V N-Channel MOSFET
SRFET TM
General Description
SRFETTM AOL1718 uses advanced trench technology with a monolithically integrated
Schottky diode to provide excellent RDS(ON) and low gate charge. This device is ideally suited for use as a low side switch in CPU core power conversion.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
30V 90A < 3mΩ < 4.3mΩ
100% UIS Tested 100% Rg Tested
UltraSO-8TM
Top View
Bottom View
D
G S
S G
D
SRFETTM Soft Recovery MOSFET: Integrated
Schottky Diode
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR EAS, EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±20 90 71 410 21 16 40 80 100 50 2.1 1.3
-55 to 175
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 20 48 1
Max 25 60 1.5
Units V V
A
A A mJ W
W °C
Units °C/W °C/W °C/W
Rev 2: April 2011
www.aosmd.com
Page 1 of 7
AOL1718
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAME...