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IXBH16N170
BIMOSFET Monolithic Bipolar MOS Transistor
Description
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS
Transistor
IXBH16N170 IXBT16N170 VCES = IC90 = VCE(sat) ≤ 1700V 16A 3.3V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ =...
IXYS
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