High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM
Monolithic Bipolar MOS Transistor
IXBF 40N160
IC25 = 28 A VCES = 1600 V VCE(sat) = 6.2 V tf = 40 ns
1 5
IGBT
Symbol VCES VGES IC25 IC90 ICM VCEK Ptot
Symbol
V CE(sat)
VGE(th) ICES
IGES td(on) t
r
td(off) tf C
ies
QGon VF RthJC
Conditions TVJ = 25°C to 150°C
TC = 25°C TC = 90°C VGE = 15/0 V; RG = 22 ...
