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IXBF9N160G

IXYS
Part Number IXBF9N160G
Manufacturer IXYS
Description High Voltage BIMOSFET
Published Oct 29, 2015
Detailed Description High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N160 G IC25 = 7 A VCES...
Datasheet PDF File IXBF9N160G PDF File

IXBF9N160G
IXBF9N160G

Overview
High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N160 G IC25 = 7 A VCES = 1600 V VCE(sat) = 4.
9 V tf = 70 ans 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Cies Q Gon V F RthJC Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 10/0 V; R G = 27 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings 1600 V ± 20 V 7A 4A 12 0.
8·VCES 70 A W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.
typ.
max.
IC = 5 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C I = 0.
5 mA; V = V C GE CE VCE = 0.
8VCES; VGE = 0 V; TVJ = 2...


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