IXGH40N120B2D1

High Voltage IGBTs w/Diode IXGH40N120B2D1 IXGT40N120B2D1 VCES = 1200V IC110 = 40A VCE(sat) ≤ 3.5V tfi(typ) = 140ns Symbol VCES VCGR VGES VGEM IICC12150 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TTCC = = 25°C (Limited 110°C by Lead) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 Maximum Ratings 1200 1200 ± 20 ± 30 75 40 25 200 V V V V A A A A ICM = 80 @ 0.8 ≤ VCES 380 -55 ... +150 150 -55 ... +150 300 260 1.13/10 A V W °C °C °C °C °C Nm/lb.in. 6g 4g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = 40A, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 3.0 5.0 V TJ = 125°C 100 μA 3 mA ±100 nA 2.9 3.5 V TO-247 (IXGH) G CE TO-268 (IXGT) C (TAB) GE C (TAB) G = Gate C = Collector E = Emitter TAB = Collector Features z International Standard Packages z IGBT and Anti-Parallel FRED for Resonant Power Supplies - Induction Heating - Rice Cookers z Square RBSOA z Fast Recovery Expitaxial Diode (FRED) - Soft Recovery with Low IRM Advantages z High Power Density z Low Gate Drive Requirement © 2009 IXYS CORPORATION, All RrightsRreserved DS99555B(02/09) Symbol Test Conditions (TJ = 25°C Unless...