IXGR50N90B2D1

IXGR 50N90B2D1 HiPerFASTTM IGBT with Fast Diode IXGR 50N90B2D1 B2-Class High Speed IGBT with Fast Diode (Electrically Isolated Back Surface) VCES IC25 VCE(sat) tfi typ = 900 V = 40 A = 2.9 V = 200 ns Symbol Test Conditions VCES V CGR VGES VGEM IC25 IC110 I F110 I CM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C (IGBT) TC = 110°C (diode) TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 720V PC TC = 25°C TJ T JM T stg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL FC Weight 50/60 Hz, RMS, t = 1ms Mounting force (PLUS247) Maximum Ratings 900 V 900 V ± 20 ± 30 V V 40 A 19 A 22 A 200 A ICM = 100 A 100 -55 ... +150 150 -55 ... +150 300 W °C °C °C °C 2500 20..120 / 4.5..25 ISOPLUS247 5 V N/lb g ISOPLUS247 (IXGR) E153432 G C E ISOLATED TAB G = Gate E = Emitter C = Collector TAB = Collector Features Electrically isolated tab International standard package outline High current handling capability MOS Gate turn-on Drive simplicity Rugged NPT structure UL recognized Molding epoxies meet UL 94V-0 flammability classification Symbol Test Conditions (TJ = 25°C unless otherwise specified) V GE(th) IC = 250 μA, VCE = VGE I CES IGES V CE(sat) VCE = VCES VGE = 0 V TJ = 150°C VCE = 0 V, VGE = ± 20 V IC = ITT,JV=GE1=251°5CV, Note 1, 2 Characteristic Values Min. Typ. Max. 3.0 5.0 V 50 μA 1 mA ± 100 nA 2.2 2.9 V Applications Capacitor d...