Advance Technical Information
HiPerFASTTM IGBT IXGR 32N90B2D1 with Fast Diode
Electrically Isolated Base
V I CES VC25 t CE(sat)
fi typ
= 900 V = 47 A = 2.9 V = 150 ns
Symbol
Test Conditions
VCES VCGR
TJ = 25OC to 150OC TJ = 25OC to 150OC; RGE = 1 MΩ
VGES VGEM
Continuous Transient
IC25 IC110 ICM
TC = 25OC TC = 110OC TC = 25OC, 1 ms
SSOA (RBSOA)
PC...
