IXSH35N120A

High Voltage, High speed IGBT Short Circuit SOA Capability IXSH 35N120A VCES IC25 VCE(sat) = 1200 V = 70 A = 4V Symbol Test Conditions VCES V CGR VGES V GEM IC25 IC90 I CM SSOA (RBSOA) TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MW Continuous Transient TC = 25°C TC = 90°C T C = 25°C, 1 ms VGE= 15 V, TJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH tSC (SCSOA) P C TJ TJM Tstg Md Weight VGE= 15 V, VCE = 0.6 VCES, TJ = 125°C RG = 22 W, non repetitive T C = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 1200 1200 ±20 ±30 70 35 140 ICM = 70 @ 0.8 VCES 10 V V V V A A A A ms 300 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. 6g 300 °C Symbol BVCES V GE(th) I CES IGES V CE(sat) Test Conditions IC = 3 mA, VGE = 0 V I = 4 mA, V = V C CE GE V = 0.8 V CE CES VGE = 0 V VCE = 0 V, VGE = ±20 V I = I , V = 15 V C C90 GE Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4 6 V 8V T J = 25°C TJ = 125°C 400 mA 1.2 mA ±100 nA 4V TO-247 AD G C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features q International standard package JEDEC TO-247 q High frequency IGBT with guaranteed Short Circuit SOA capability q Fast Fall Time for switching speeds up to 20 kHz q 2nd generation HDMOSTM process q Low V CE(sat) - for minimum on-state conduction losses q MOS Gate turn-on - drive simplicity Applications q AC motor s...