FII30-06D

IGBT phaseleg in ISOPLUS i4-PAC™ FII 30-06D IC25 = 30 A VCES = 600 V VCE(sat) typ. = 1.9 V 3 5 4 1 E72873 2 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = ±15 V; RG = 47 Ω; TVJ = 125°C RBSOA Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 47 Ω TVJ = 125°C; non-repetitive TC = 25°C Maximum Ratings 600 V ± 20 V 30 18 40 VCES 10 A A A µs 100 W Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJH Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 20 A; VGE = 15 V IC = 0.5 mA; VGE = VCE VCE = VCES; VGE = 0 V VCE = 0 V; VGE = ± 20 V TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C Inductive load VCE = 300 V; IC = 20 A VGE = ±15 V; RG = 47 Ω TVJ = 125°C 1.9 2.2 4.5 0.6 50 55 200 30 0.75 0.6 2.4 V V 6.5 V 0.6 mA mA 200 nA ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300 V; VGE = 15 V; IC = 20 A with heatsink compound 1.1 nF 65 nC 1.25 K/W 2.5 K/W Features NPT IGBT technology - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching HiPerFRED™ diode - optimized fast and soft reverse recovery - low operating forward voltage - low leakage current ISOPLUS i4-PAC™ package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - ...