FID60-06D

IGBT Boost Chopper in ISOPLUS i4-PAC™ FID 60-06D IC25 = 65 A VCES = 600 V VCE(sat) typ. = 1.6 V 3 4 1 E72873 2 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 22 Ω TVJ = 125°C; non-repetitive TC = 25°C Maximum Ratings 600 V ± 20 V 65 40 100 VCES 10 A A A µs 200 W Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJH Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 30 A; VGE = 15 V IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V VCE = 0 V; VGE = ± 20 V TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C Inductive load VCE = 300 V; IC = 30 A VGE = ±15 V; RG = 22 Ω TVJ = 125°C 1.6 1.8 4.5 0.1 50 60 300 30 1.0 1.4 2.0 V V 6.5 V 0.1 mA mA 200 nA ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300 V; VGE = 15 V; IC = 50 A with heatsink compound 2.8 nF 120 nC 0.6 K/W 1.2 K/W Features NPT IGBT technology - low saturation voltage with positive temperature coefficient - fast switching - wide safe operating area HiPerFRED™ diode - fast reverse recovery - low operating forward voltage - low leakage current ISOPLUS i4-PAC™ package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low induc...