IXSH15N120B

HIGH Voltage IGBT IXSH 15N120B IXST 15N120B "S" Series - Improved SCSOA Capability IC25 VCES VCE(sat) = 30 A = 1200 V = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient 1200 1200 ±20 ±30 TC = 25°C TC = 90°C TC = 25°C, 1 ms 30 15 60 V= GE 15 V, T J = 125°C, R G = 10 W Clamped inductive load I = 40 CM @ 0.8 VCES TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 10 W Non repetitive 10 V V V V A A A A ms PC TC = 25°C T J TJM T stg Md Mounting torque (TO-247) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering (TO-268) 150 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. 300 °C 260 °C Weight TO-247 TO-268 6g 4g Symbol BVCES V GE(th) ICES I GES V CE(sat) Test Conditions IC = 1.0 mA, VGE = 0 V I C = 250 mA, V CE = V GE VCE = 0.8 VCES Note 1 V CE = 0 V, V GE = ±20 V I = I V = 15 V C C90, GE Note 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 125°C TJ = 125°C 1200 3 V 6V 50 mA 2.5 mA ±100 nA 3.0 3.4 V 2.8 V TO-247 AD (IXSH) G C E TO-268 (IXST) G E (TAB) (TAB) Features High Blocking Voltage Epitaxial Silicon drift region - fast switching - small tail current - low switching losses MOS gate turn-on for drive simplicity Molding epoxies meet UL 94 V-0 flammability classificati...