IXGN80N60A2D1

Advanced Technical Data IGBT Optimized for Switching up to 5 kHz IXGN 80N60A2 IXGN 80N60A2D1 VCES = IC25 = VCE(sat) = 600 V 160 A 1.35 V Symbol Test Conditions VCES VCGR TJ TJ VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) = 25°C to 150°C = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1 ms IXGN80N60A2D1 VGE = 15 V, TVJ = 125°C, RG = 2.0 Ω Clamped inductive load PC TJ TJM Tstg VISOL Md TC = 25°C 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s Mounting torque Terminal connection torque (M4) Weight E D1 Maximum Ratings 600 V 600 V ±20 V ±30 V 160 A 80 A 60 A 320 A ICM = 160 @ 0.8 VCES 625 A W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol VGE(th) ICES IGES VCE(sat) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 1 mA, VCE = VGE VCE = VCES, VGE = 0 V Note 3 80N60A2 80N60A2D1 VCE = 0 V, VGE = ±20 V IC = IC110, VGE = 15 V, Note 1 2.5 5.5 25 650 ±400 1.2 1.35 V µA µA nA V SOT-227B, miniBLOC E153432 E G E C G = Gate, C = Collector, E = Emitter either emitter terminal can be used as Main or Kelvin Emitter Features International standard package miniBLOC UL recognized Aluminium nitride isolation - high power dissipation Isolation voltage 3000 V~ Very high current IGBT Low VCE(sat) for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Low collector-to-case capacitance (< 50 pF) Low package in...