Document
High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1
Preliminary Data Sheet
VCES IC25 VCE(sat)
tfi(typ)
= 1200 V = 40 A = 3.4 V = 160 ns
Symbol
Test Conditions
VCES VCGR
VGES VGEM
IC25 IC110 ICM
SSOA (RBSOA)
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient
TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load
PC TC = 25°C
TJ TJM Tstg
Md Mounting torque (M3.5 screw)
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature soldering SMD devices for 10s
Weight
D1 Maximum Ratings
1200 1200
V V
±20 V ±30 V
40 A 20 A 100 A
ICM = 40 @0.8 VCES
190
A W
-55 ... +150 150
-55 ... +150
°C °C °C
0.55/5 Nm/lb.in.
300 °C
260 °C
4g
TO-220 (IXGP)
GC E
C (TAB)
G = Gate E = Emitter
C = Collector TAB = Collector
Features
z International standard package z IGBT and anti-parallel FRED for
resonant power supplies - Induction heating - Rice cookers z MOS Gate turn-on - drive simplicity z Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM
Advantages
z Saves space (two devices in one package)
z Easy to mount with 1 screw z Reduces assembly time and cost
Symbol
VGE(th) ICES IGES VCE(sat)
Test Conditions
IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 20A, VGE = 15 V Note 2
Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max.
20N120B 20N120BD1
2.5
5.0 V
50 µA 150 µA
TJ=125°C
±100 nA
2.9 3.4 V 2.8 V
© 2003 IXYS All rights reserved
DS99138(12/03)
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Cies
Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff
RthJC RthCK
IC = 20A; VCE = 10 V, Note 2.
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 20A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C IC = 20 A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 Ω Note 1.
Inductive load, TJ = 125°C IC = 20A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 Ω Note 1
12 18
1700
20N120B
95
20N120BD1 105
39
72 12 27
25
15
150
160 2.1
25
18 1.4 270
360 3.5
S
pF pF pF pF
nC nC nC
ns ns 280 ns 320 ns 3.5 mJ
ns ns mJ ns ns mJ
0.65 K/W
0.25
K/W
IXGP 20N120B IXGP 20N120BD1
TO-220 Outline
Pins: 1 - Gate 3 - Emitter
2 - Collector 4 - Collector
Reverse Diode (FRED) Symbol Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max.
VF IF IRM trr trr RthJC
IF = 10 A, VGE = 0 V TC = 90°C IF = 10 A; -diF/dt = 400 A/µs, VR = 600 V VGE = 0 V; TJ = 125°C IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V
3.3 V
10 A
14 A 120 ns
40 ns
2.5 K/W
Notes: 1. 2.
Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
VC E - Volts
I C - Amperes
I C - Amperes
Fig. 1. Output Characte ris tics @ 25 Deg. C
40 VGE = 15V
35 13V 11V
30 9V
25
20 7V
15
10
5 5V
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VC E - Volts
Fig. 3. Output Characteristics @ 125 Deg. C
40 VGE = 15V
35 13V 11V
30 9V
25
20 7V
15
10
5 5V
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VCE - Volts
Fig. 5. Colle ctor-to-Em itter Voltage vs. Gate-to-Em iite r voltage
6.5 6 TJ = 25ºC
5.5
5 IC = 40A 4.5 20A
4 10A
3.5
3
2.5 2
1.5 6 7 8 9 10 11 12 13 14 15 16 17
VG E - Volts
© 2003 IXYS All rights reserved
I C - Amperes
V C E (sat)- Normalized
I C - Amperes
IXGP 20N120B IXGP 20N120BD1
Fig. 2. Extended Output Characte ris tics
@ 25 deg. C
160 140
VGE = 15V
13V
120
100 11V
80 9V
60
40
7V 20
5V 0
0 2 4 6 8 10 12 14 16 18 20 VC E - Volts
Fig. 4. Dependence of VCE(sat) on Tem pe rature
1.5
1.4 VGE = 15V 1.3
IC = 40A
1.2
1.1 IC = 20A
1.0
0.9 IC = 10A
0.8
0.7 -50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Input Adm ittance
60
50
40
30
20
10
0 4
TJ = 125ºC 25ºC -40ºC
5 67
VG E - Volts
8
9
IXGP 20N120B IXGP 20N120BD1
g f s - Siemens
Eoff - MilliJoules
Fig. 7. Trans conductance
24
21 TJ = -40ºC 25ºC
18 125ºC
15
12
9
6
3
0
0 10 20 30 40 50
I C - Amperes
Fig. 9. Dependence of Turn-Off
Ene rgy Loss on Ic
14
RG = 10Ω
12 RG = 100Ω - - VGE = 15V
10
VCE = 960V TJ = 125ºC
8
6 TJ = 125ºC
4 TJ = 25ºC
2
0 10 15 20 25 30 35
I C - Amperes
1400 1200 1000
Fig. 11. Dependence of Turn-off Sw itching Tim e on RG
td(off) tfi - - - - - -
TJ = 125ºC VGE = 15V VCE = 960V
800 600
IC = 10A
IC = 40A
60 40
400
200
IC = 20A
10 30 50 70 90 110 130 150
R G - Ohms
Switching Time - nanoseconds
Eoff - milliJoules
Eoff - milliJoules
Fig. 8. Dependence of Turn-off
Ene rgy Loss on RG
16
TJ = 125ºC 14 VGE = 15V
VCE = 960V 12
IC = 40A
10
8 IC = 20A
6
4
2 IC = 10A
0 1.