DatasheetsPDF.com

IXGP20N120BD1 Dataheets PDF



Part Number IXGP20N120BD1
Manufacturers IXYS
Logo IXYS
Description High Voltage IGBT
Datasheet IXGP20N120BD1 DatasheetIXGP20N120BD1 Datasheet (PDF)

High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1 Preliminary Data Sheet VCES IC25 VCE(sat) tfi(typ) = 1200 V = 40 A = 3.4 V = 160 ns Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load PC TC = 25°C TJ TJM Tstg Md Mounting torque (M3.5 screw) Maximum lead temperature for soldering 1.6 mm (0.062 in.) f.

  IXGP20N120BD1   IXGP20N120BD1



Document
High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1 Preliminary Data Sheet VCES IC25 VCE(sat) tfi(typ) = 1200 V = 40 A = 3.4 V = 160 ns Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load PC TC = 25°C TJ TJM Tstg Md Mounting torque (M3.5 screw) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature soldering SMD devices for 10s Weight D1 Maximum Ratings 1200 1200 V V ±20 V ±30 V 40 A 20 A 100 A ICM = 40 @0.8 VCES 190 A W -55 ... +150 150 -55 ... +150 °C °C °C 0.55/5 Nm/lb.in. 300 °C 260 °C 4g TO-220 (IXGP) GC E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features z International standard package z IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers z MOS Gate turn-on - drive simplicity z Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages z Saves space (two devices in one package) z Easy to mount with 1 screw z Reduces assembly time and cost Symbol VGE(th) ICES IGES VCE(sat) Test Conditions IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 20A, VGE = 15 V Note 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 20N120B 20N120BD1 2.5 5.0 V 50 µA 150 µA TJ=125°C ±100 nA 2.9 3.4 V 2.8 V © 2003 IXYS All rights reserved DS99138(12/03) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = 20A; VCE = 10 V, Note 2. VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 20A, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C IC = 20 A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 Ω Note 1. Inductive load, TJ = 125°C IC = 20A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 Ω Note 1 12 18 1700 20N120B 95 20N120BD1 105 39 72 12 27 25 15 150 160 2.1 25 18 1.4 270 360 3.5 S pF pF pF pF nC nC nC ns ns 280 ns 320 ns 3.5 mJ ns ns mJ ns ns mJ 0.65 K/W 0.25 K/W IXGP 20N120B IXGP 20N120BD1 TO-220 Outline Pins: 1 - Gate 3 - Emitter 2 - Collector 4 - Collector Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VF IF IRM trr trr RthJC IF = 10 A, VGE = 0 V TC = 90°C IF = 10 A; -diF/dt = 400 A/µs, VR = 600 V VGE = 0 V; TJ = 125°C IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V 3.3 V 10 A 14 A 120 ns 40 ns 2.5 K/W Notes: 1. 2. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 VC E - Volts I C - Amperes I C - Amperes Fig. 1. Output Characte ris tics @ 25 Deg. C 40 VGE = 15V 35 13V 11V 30 9V 25 20 7V 15 10 5 5V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VC E - Volts Fig. 3. Output Characteristics @ 125 Deg. C 40 VGE = 15V 35 13V 11V 30 9V 25 20 7V 15 10 5 5V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VCE - Volts Fig. 5. Colle ctor-to-Em itter Voltage vs. Gate-to-Em iite r voltage 6.5 6 TJ = 25ºC 5.5 5 IC = 40A 4.5 20A 4 10A 3.5 3 2.5 2 1.5 6 7 8 9 10 11 12 13 14 15 16 17 VG E - Volts © 2003 IXYS All rights reserved I C - Amperes V C E (sat)- Normalized I C - Amperes IXGP 20N120B IXGP 20N120BD1 Fig. 2. Extended Output Characte ris tics @ 25 deg. C 160 140 VGE = 15V 13V 120 100 11V 80 9V 60 40 7V 20 5V 0 0 2 4 6 8 10 12 14 16 18 20 VC E - Volts Fig. 4. Dependence of VCE(sat) on Tem pe rature 1.5 1.4 VGE = 15V 1.3 IC = 40A 1.2 1.1 IC = 20A 1.0 0.9 IC = 10A 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Input Adm ittance 60 50 40 30 20 10 0 4 TJ = 125ºC 25ºC -40ºC 5 67 VG E - Volts 8 9 IXGP 20N120B IXGP 20N120BD1 g f s - Siemens Eoff - MilliJoules Fig. 7. Trans conductance 24 21 TJ = -40ºC 25ºC 18 125ºC 15 12 9 6 3 0 0 10 20 30 40 50 I C - Amperes Fig. 9. Dependence of Turn-Off Ene rgy Loss on Ic 14 RG = 10Ω 12 RG = 100Ω - - VGE = 15V 10 VCE = 960V TJ = 125ºC 8 6 TJ = 125ºC 4 TJ = 25ºC 2 0 10 15 20 25 30 35 I C - Amperes 1400 1200 1000 Fig. 11. Dependence of Turn-off Sw itching Tim e on RG td(off) tfi - - - - - - TJ = 125ºC VGE = 15V VCE = 960V 800 600 IC = 10A IC = 40A 60 40 400 200 IC = 20A 10 30 50 70 90 110 130 150 R G - Ohms Switching Time - nanoseconds Eoff - milliJoules Eoff - milliJoules Fig. 8. Dependence of Turn-off Ene rgy Loss on RG 16 TJ = 125ºC 14 VGE = 15V VCE = 960V 12 IC = 40A 10 8 IC = 20A 6 4 2 IC = 10A 0 1.


IXGP20N120B IXGP20N120BD1 IXGH10N170


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)