IXGP2N100A

High Voltage IGBT VCES IXGP 2N100 1000 V IXGP 2N100A 1000 V IC90 2.0 A 2.0 A VCE(SAT) 2.7 V 3.5 V Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW VGES VGEM IC25 IC90 ICM SSOA (RBSOA) Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 150W Clamped inductive load PC TJ TJM TSTG Weight TC = 25°C Max. Lead Temperature for Soldering (1.6mm from case for 10s) Maximum Ratings 1000 V 1000 V ±20 V ±30 V 4 2 8 ICM = 6 @ 0.8 VCES 25 -55 ... +150 150 -55 ... +150 4 300 A A A A W °C °C °C g °C Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES IC = 25µA, VGE = 0 V 1000 V VGE(th) IC = 25µA, VCE = VGE 2.5 5.0 V ICES VCE = 0.8 VCES VGE = 0 V TJ = 25°C TJ = 125°C 10 µA 200 µA IGES VCE = 0 V, VGE = ±20 V + 50 nA VCE(sat) IC = IC90, VGE = 15 V IXGP2N100 IXGP2N100A 2.7 V 3.5 V TO-220 1 2 3 1 = Gate 3 = Emitter 4 2 = Collector 4 = Collector Features • International standard package • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity Applications • Capacitor discharge • Anode triggering of thyristors • DC choppers • Switched-mode and resonant-mode power supplies. © 2000 IXYS All rights reserved 95514C (9/00) IXGP 2N100 IXGP 2N100A Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs IC = IC90, VCE = 10 V, Pulse test, t < 300 µs, duty cycle < 2...