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NTLUS3A90PZ

ON Semiconductor

P-Channel Power MOSFET

NTLUS3A90PZ MOSFET – Power, Single, P-Channel, ESD, mCool, UDFN, 1.6x1.6x0.55 mm -20 V, -5.0 A Features • UDFN Package...


ON Semiconductor

NTLUS3A90PZ

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Description
NTLUS3A90PZ MOSFET – Power, Single, P-Channel, ESD, mCool, UDFN, 1.6x1.6x0.55 mm -20 V, -5.0 A Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN 1.6x1.6x0.55 mm for Board Space Saving Lowest RDS(on) in 1.6x1.6 Package ESD Protected These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications High Side Load Switch PA Switch and Battery Switch Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage VDSS −20 V Gate-to-Source Voltage VGS ±8.0 V Continuous Drain Steady TA = 25°C ID Current (Note 1) State TA = 85°C −4.0 A −2.9 t ≤ 5 s TA = 25°C −5.0 Power Dissipa- Steady TA = 25°C PD tion (Note 1) State 1.5 W t ≤ 5 s TA = 25°C 2.3 Continuous Drain Steady TA = 25°C ID Current (Note 2) State TA = 85°C −2.6 A −1.9 Power Dissipation (Note 2) TA = 25°C PD 0.6 W Pulsed Drain Current tp = 10 ms IDM −17 A Operating Junction and Storage Temperature TJ, -55 to °C TSTG 150 Source Current (Body Diode) (Note 2) IS −0.84 A Lead Temperature for Soldering Purposes TL 260 °C (1/8″ from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended expo...




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