CPH6350

Ordering number : ENA1529B CPH6350 P-Channel Power MOSFET –30V, –6A, 43mΩ, Single CPH6 http://onsemi.com Features 4V drive Low ON-resistance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings --30 ±20 --6 --24 1.6 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 0.9 2.8 0.2 0.6 1.6 0.6 0.2 XC LOT No. Package Dimensions unit : mm (typ) 7018A-003 2.9 654 12 0.95 3 0.4 Ordering & Package Information Device Package Shipping CPH6350-TL-E CPH6 3,000pcs./ SC-74, SOT-26, SOT-457 reel memo Pb-Free 0.15 CPH6350-TL-E CPH6350-TL-W CPH6350-TL-W CPH6 SC-74, SOT-26, SOT-457 3,000pcs./ reel Pb-Free and Halogen Free 0.05 Packing Type: TL Marking 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain CPH6 TL Electrical Connection 1, 2, 5, 6 3 4 Semiconductor Components Industries, LLC, 2013 August, 2013 82813 TKIM/71112 TKIM TC-00002780/80509PE TKIM TC-00002052 No. A15...