Power MOSFET
CPH3348
Power MOSFET –12V, 70mΩ, –3A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench t...
Description
CPH3348
Power MOSFET –12V, 70mΩ, –3A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
Features Low On-Resistance 1.8V drive Pb-Free and RoHS compliance Halogen Free compliance : CPH3348-TL-W
Typical Applications Load Switch DC/DC Converter
SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
12 V
Gate to Source Voltage
VGSS
10 V
Drain Current (DC)
ID 3 A
Drain Current (Pulse) PW 10s, duty cycle 1%
IDP
12 A
Power Dissipation
When mounted on ceramic substrate (1200mm2 0.8mm)
PD
1.0 W
Junction Temperature
Tj 150 C
Storage Temperature
Tstg
55 to +150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : This product is designed to “ESD immunity<200V*”, so please take care when
handling.
*Machine Model
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient When mounted on ceramic substrate (1200mm2 0.8mm)
Symbol RJA
Value
Unit
125 C/W
www.onsemi.com
VDSS 12V
RDS(on) Max 70mΩ@ 4.5V 115mΩ@ 2.5V 215mΩ@ 1.8V
ID Max 3A
ELECTRICAL CONNECTION P-C...
Similar Datasheet