CPH3350

Ordering number : ENA0151B CPH3350 P-Channel Power MOSFET –20V, –3A, 83mΩ, Single CPH3 http://onsemi.com Features Ultrahigh-speed switching 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings --20 ±10 --3 --12 1.0 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7015A-004 2.9 3 Product & Package Information Package : CPH3 JEITA, JEDEC : SC-59, TO-236, SOT-23 Minimum Packing Quantity : 3,000 pcs./reel CPH3350-TL-H 0.15 CPH3350-TL-W Packing Type: TL Marking 0.9 2.8 0.2 0.6 1.6 0.6 0.2 WG LOT No. 1 0.95 2 0.4 0.05 1 : Gate 2 : Source 3 : Drain CPH3 TL Electrical Connection 3 1 2 Semiconductor Components Industries, LLC, 2013 October, 2013 O0913 TKIM TC-00002895/60612 TKIM/D1411PE TKIM TC-00002683 No. A0151-1/6 CPH3350 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-t...