NTLJF4156N
MOSFET – Power, N-Channel with Schottky Barrier Diode, Schottky Diode, mCool, WDFN 2X2 mm
30 V, 4.6 A, 2.0 A...
NTLJF4156N
MOSFET – Power, N-Channel with
Schottky Barrier Diode,
Schottky Diode, mCool, WDFN 2X2 mm
30 V, 4.6 A, 2.0 A
Features
WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
Co−Packaged MOSFET and
Schottky For Easy Circuit Layout RDS(on) Rated at Low VGS(on) Levels, VGS = 1.5 V Low Profile (< 0.8 mm) for Easy Fit in Thin Environments Low VF
Schottky This is a Pb−Free Device
Applications
DC−DC Converters Li−Ion Battery Applications in Cell Phones, PDA’s, Media Players Color Display and Camera Flash
Regulators
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±8.0
V
Continuous Drain Current (Note 1)
Steady TJ = 25°C
ID
State TJ = 85°C
3.7
A
2.7
t ≤ 5 s TJ = 25°C
4.6
Power Dissipation (Note 1)
Steady
PD
State TJ = 25°C
t ≤5 s
1.5
W
2.3
Continuous Drain Current (Note 2)
Power Dissipation (Note 2)
TJ = 25°C
ID
Steady TJ = 85°C
State TJ = 25°C
PD
2.5
A
1.8
0.71
Pulsed Drain Current
tp = 10 ms
IDM
20
A
Operating Junction and Storage Temperature TJ, TSTG −55 to °C 150
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IS
2.4
A
TL
260
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. I...
