www.vishay.com
SQD30N05-20L
Vishay Siliconix
Automotive N-Channel 55 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RD...
www.vishay.com
SQD30N05-20L
Vishay Siliconix
Automotive N-Channel 55 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration Package
55 0.020 0.026
30 Single TO-252
FEATURES TrenchFET® power MOSFET 100 % Rg and UIS tested AEC-Q101 qualified d Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
D
TO-252
Drain connected to tab
G
S D G Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a Pulsed Drain Current b
TC = 25 °C a TC = 125 °C
VDS VGS
ID
IS IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation b
TC = 25 °C TC = 125 °C
Operating Junction and Storage Temperature Range
IAS EAS
PD
TJ, Tstg
LIMIT 55 ± 20 30 19 30 120 20 20 50 16
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain)
PCB Mount c
Notes
a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing.
SYMBOL RthJA RthJC
LIMIT 60 3
UNIT V
A
mJ W °C
UNIT °C/W
S15-1873-Rev. D, 10-Aug-15
1
Document Number: 67054
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRO...