AON6708

General Description SRFETTM The AON6708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a low side FET in SMPS, load switchng and general purpose applications. AON6708 30V N-Channel MOSFET SRFET TM Product Summary VDS (V) = 30V ID = 30A (VGS = 10V) RDS(ON) < 4.7mΩ (VGS = 10V) RDS(ON) < 5.7mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current B,J TC=25°C TC=100°C ID Pulsed Drain Current IDM Continuous Drain Current H Avalanche Current C TA=25°C TA=70°C Repetitive avalanche energy L=0.3mH C IDSM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 30 30 120 20 15 40 240 62 25 2.5 1.6 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 14.2 42 1.2 Max 20 50 2.0 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6708 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Cond...