N-Channel MOSFET
AON6410
30V N-Channel MOSFET
General Description
The AON6410 uses advanced trench technology to provide excellent RDS(O...
Description
AON6410
30V N-Channel MOSFET
General Description
The AON6410 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.
Product Summary
VDS (V) = 30V ID = 24A (VGS = 10V) RDS(ON) < 12mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V)
100% UIS Tested 100% Rg Tested
Top View
DFN5X6 Bottom View
PIN1
Top View
18 27 36 45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current BJ
TC=25°C TC=100°C
ID
Pulsed Drain Current
IDM
Continuous Drain TA=25°C
Current H
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
IDSM IAR EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum 30 ±12 24 19 120 10 8 30 135 35 14 2 1.3
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 24 53 2.6
Max 30 64 3.5
D
S
Units V V A
A A mJ W W °C
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6410
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
IDSS
IGSS VGS(th) ID(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
G...
Similar Datasheet