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AOL1712 Dataheets PDF



Part Number AOL1712
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AOL1712 DatasheetAOL1712 Datasheet (PDF)

AOL1712 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AOL1712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. -RoHS Compliant -Halogen and Antimony Free Green Device* VDS (V) = 30V ID =65A RDS(ON) < 4.2mΩ RDS(ON) < 5.5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.

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AOL1712 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AOL1712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. -RoHS Compliant -Halogen and Antimony Free Green Device* VDS (V) = 30V ID =65A RDS(ON) < 4.2mΩ RDS(ON) < 5.5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View D D S G Bottom tab connected to drain G Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain TC=25°C Current B, H TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current A TA=70°C Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C ID IDM IDSM IAR EAR PD PDSM Junction and Storage Temperature Range TJ, TSTG SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode S Maximum 30 ±12 65 65 80 16 12 38 217 100 50 2.1 1.3 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 19.6 50 1 Max 25 60 1.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1712 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Diode Continuous Current H DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Total Gate Charge Gate Source Charge VGS=10V, VDS=15V, ID=20A Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω Turn-Off Fall Time Body Diode Reverse Recovery Time IF=20A, dI/dt=300A/µs Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs Min 30 1.4 80 Typ Max Units V 0.1 mA 20 ±100 nA 1.8 2.5 V A 3.5 4.2 5.5 6.6 mΩ 4.4 5.5 90 S 0.36 0.5 V 65 A 3940 590 255 0.72 5120 1.1 pF pF pF Ω 73 95 35 10.4 12.4 9.8 8.4 45 10 36 43 32 nC nC nC nC ns ns ns ns ns nC A: The value of RθJA is measured with the device in a still .


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