Document
AOL1712 N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
Features
SRFET TM AOL1712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
-RoHS Compliant -Halogen and Antimony Free Green Device*
VDS (V) = 30V ID =65A RDS(ON) < 4.2mΩ RDS(ON) < 5.5mΩ
(VGS = 10V) (VGS = 10V) (VGS = 4.5V)
UIS Tested Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
D
D
S G
Bottom tab connected to drain
G
Absolute Maximum Ratings TC=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
VDS VGS
Continuous Drain
TC=25°C
Current B, H
TC=100°C
Pulsed Drain Current C
Continuous Drain TA=25°C
Current A
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
TC=25°C Power Dissipation B TC=100°C
TA=25°C Power Dissipation A TA=70°C
ID IDM
IDSM IAR EAR PD
PDSM
Junction and Storage Temperature Range TJ, TSTG
SRFET TM
Soft Recovery MOSFET: Integrated Schottky Diode
S
Maximum 30 ±12
65
65 80 16 12 38 217 100 50 2.1 1.3 -55 to 175
Units V V
A
A A mJ W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 19.6 50
1
Max 25 60 1.5
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1712
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
VGS=10V, ID=20A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode + Schottky Diode Continuous Current H
DYNAMIC PARAMETERS
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr
Total Gate Charge
Total Gate Charge Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=300A/µs Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs
Min 30
1.4 80
Typ Max Units
V
0.1 mA
20
±100 nA
1.8 2.5
V
A
3.5 4.2
5.5 6.6 mΩ
4.4 5.5
90 S
0.36 0.5
V
65 A
3940 590 255 0.72
5120 1.1
pF pF pF Ω
73 95 35 10.4 12.4 9.8 8.4 45 10 36 43 32
nC nC nC nC ns ns ns ns
ns nC
A: The value of RθJA is measured with the device in a still .