AOL1708
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
Features
The AOL1708 uses adv...
AOL1708
N-Channel Enhancement Mode Field Effect
Transistor
SRFET TM
General Description
Features
The AOL1708 uses advanced trench technology with a monolithically integrated
Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
-RoHS Compliant -Halogen and Antimony Free Green Device*
VDS (V) = 30V
ID =70A
(VGS = 10V)
RDS(ON) < 5.9mΩ (VGS = 10V)
RDS(ON) < 9.5mΩ (VGS = 4.5V)
UIS Tested Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
S G
D
Bottom tab connected to drain
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C G
Current B
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain TA=25°C
CurrentA
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
IDSM IAR EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
D
SRFET TM Soft Recovery MOSFET: Integrated
Schottky Diode
S
Maximum 30 ±20
70
60 180 15 12.0 25 94 71 36 2.1 1.3 -55 to 175
Units V V
A
A A A mJ W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 20 50 1.5
Max 25 60 2.1
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.co...