AOL1454

AOL1454 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1454 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a low side switch in SMPS and general purpose applications. -RoHS Compliant -Halogen and Antimony Free Green Device* Features VDS (V) = 40V ID = 50A (VGS = 10V) RDS(ON) < 9mΩ (VGS = 10V) RDS(ON) < 13mΩ (VGS = 4.5V) ESD Protected UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View D S G Bottom tab connected to drain Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C H Current B TC=100°C Pulsed Drain Current C Continuous Drain Current A Avalanche Current C TA=25°C TA=70°C Repetitive avalanche energy L=0.3mH C Power Dissipation B Power Dissipation A TC=25°C TC=100°C TA=25°C TA=70°C VDS VGS ID IDM IDSM IAR EAR PD PDSM Junction and Storage Temperature Range TJ, TSTG G Maximum 40 ±20 50 48 100 12 10 30 135 60 30 2.1 1.3 -55 to 175 D S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 20 50 1.8 Max 25 60 2.5 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1454 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARA...