AOL1436 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1436 uses advanced trench technol...
AOL1436 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AOL1436 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suite for use as a High side switch in CPU core power conversion.
-RoHS Compliant -Halogen and Antimony Free Green Device*
Features
VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) < 6mΩ (VGS = 20V) RDS(ON) < 8.2mΩ (VGS = 12V) RDS(ON) < 11.5mΩ (VGS = 10V)
UIS Tested Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
D
S G
D
Bottom tab connected to drain
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C G
Current B
TC=100°C
Pulsed Drain CurrentC
VGS
ID IDM
Continuous Drain Current A Avalanche CurrentC
TA=25°C TA=70°C
Repetitive avalanche energy L=0.3mHC
IDSM IAR EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Thermal Characteristics
Parameter Maximum Junction-to-AmbientA Maximum Junction-to-AmbientA
t ≤ 10s Steady-State
Symbol RθJA
Maximum Junction-to-CaseD
Steady-State
RθJC
Maximum 25 ±30 50 48 120 15 12 28 118 43 22 2.3 1.4
-55 to 175
Typ 20 46 2.5
Max 25 55 3.5
Alpha & Omega Semiconductor, Ltd.
Units V V
A
A A mJ W
W °C
Units °C/W °C/W °C/W
www.aosmd.com
AOL1436
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Paramete...