AOL1424

AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD protected.This device is suitable for use as a load switch. -RoHS Compliant -Halogen and Antimony Free Green Device* Features VDS (V) = 30V ID = 70A (VGS = 10V) RDS(ON) < 6.5mΩ (VGS = 10V) RDS(ON) < 9.8mΩ (VGS = 4.5V) ESD Protected UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View S G D Bottom tab connected to drain G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current B TC=100°C Pulsed Drain Current C ID IDM Continuous Drain Current A Avalanche Current H TA=25°C TA=70°C Repetitive avalanche energy L=0.3mH H IDSM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 70 50 120 15 12 30 135 50 25 2.2 1.5 -55 to 175 D S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 20 45 2.5 Max 24 55 3.0 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1424 Electrical Characteristics (TJ=25°C unless otherwise note...