AOI452

AOI452 N-Channel Enhancement Mode Field Effect Transistor General Description The AOI452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOI452 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 8.7 mΩ (VGS = 10V) RDS(ON) < 14.7 mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested IPAK D GD S Top View Drain Connected to Tab G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 25 ±20 55 40 100 40 80 50 25 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 14.2 39 2.5 Max 20 50 3 Units V V A A mJ W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOI452 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250uA, VGS=0V VDS=25V, VGS=0V IGSS VGS(th) I...