AO6400

AO6400 30V N-Channel MOSFET General Description Product Summary The AO6400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 30V 6.9A < 28mΩ < 33mΩ < 52mΩ TSOP6 Top View Bottom View Top View Pin1 D1 D2 G3 6D 5D 4S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C ID IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 6.9 5.8 35 2 1.3 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 47.5 74 37 Max 62.5 110 50 D S Units V V A W °C Units °C/W °C/W °C/W Rev 12: Dec 2011 www.aosmd.com Page 1 of 5 AO6400 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V ...