AO5404E N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO5404E/L uses advanced trench techn...
AO5404E N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO5404E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO5404E and AO5404EL are electrically identical.
-RoHS compliant -AO5404EL is Halogen Free
Features
VDS (V) = 20V ID = 0.5 A (VGS = 4.5V) RDS(ON) < 0.55 Ω (VGS = 4.5V) RDS(ON) < 0.68 Ω (VGS = 2.5V) RDS(ON) < 0.80 Ω (VGS = 1.8V)
ESD PROTECTED!
SC89-3L
D
D
G
S G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain TA=25°C
Current A, F
TA=70°C
Pulsed Drain Current B
ID IDM
0.5 0.5 0.5 0.45
3
TA=25°C Power Dissipation A TA=70°C
PD
0.38 0.24
0.28 0.18
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol
t ≤ 10s Steady-State
RθJA
Steady-State
RθJL
Typ 275 360
300
Max 330 450
350
Units V V
A
W °C
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO5404E
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th) ID(ON)
Gate-Body leakage current
Gate Thresho...