AO5404E N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO5404E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO5404E and AO5404EL are electrically identical.
-RoHS compliant -...
