AO4726

AO4726 30V N-Channel MOSFET SRFET TM General Description SRFETTM The AO4726 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Product Summary VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.5mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.3mH B IDSM IDM IAR EAR Power Dissipation TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG G S Maximum 30 ±12 20 16 105 30 45 3.1 2.0 -55 to 150 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Units V A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State RθJA Steady-State RθJL Typ 32 60 17 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4726 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=10mA, VGS=0V VDS=30V, ...