General Description
SRFET TM The AO4718 uses advanced trench technology with a monolithically integrated Schottky diode ...
General Description
SRFET TM The AO4718 uses advanced trench technology with a monolithically integrated
Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
AO4718
30V N-Channel MOSFET
SRFET TM
Features
VDS (V) = 30V ID =15A (VGS = 10V) RDS(ON) < 9mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V)
100% UIS Tested 100% Rg Tested
Top View
D D D D
SOIC-8 Bottom View
D
G
S S S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
Avalanche Current B Avalanche energy L=0.3mH B
VGS
IDSM IDM IAS, IAR EAS, EAR
Power Dissipation
TA=25°C TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum 30 ±20 15 12 80 25 94 3.1 2.0
-55 to 150
SRFETTM Soft Recovery MOSFET: Integrated
Schottky Diode
Units V
A
mJ W °C
Thermal Characteristics Parameter
Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
t ≤ 10s Steady-State
RθJA
Steady-State
RθJL
Typ 32 60
17
Max 40 75
24
Units °C/W °C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4718
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250uA, VGS=0V VDS=30V, VGS=0V
IGSS V...