AO4706
30V N-Channel MOSFET
SRFET TM
General Description
SRFET TM The AO4706 uses advanced trench technology with a mon...
AO4706
30V N-Channel MOSFET
SRFET TM
General Description
SRFET TM The AO4706 uses advanced trench technology with a monolithically integrated
Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
Product Summary
VDS (V) = 30V ID =16.5A (VGS = 10V) RDS(ON) < 6.8mΩ (VGS = 10V) RDS(ON) < 8.2mΩ (VGS = 4.5V)
100% UIS Tested 100% Rg Tested
Top View
D D D D
SOIC-8 Bottom View
D
G
S S S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
Avalanche Current B
Repetitive avalanche energy L=0.3mH B
IDSM IDM IAR EAR
Power Dissipation
TA=25°C TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum 30 ±12 16.5 13.2 100 30 135 3.1 2.0
-55 to 150
SRFETTM Soft Recovery MOSFET: Integrated
Schottky Diode
Units V V A A A mJ W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 31 59 16
Max 40 75 24
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4706
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=1mA, VGS=0V
IDSS
IGSS VGS(...