AO4706

AO4706 30V N-Channel MOSFET SRFET TM General Description SRFET TM The AO4706 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Product Summary VDS (V) = 30V ID =16.5A (VGS = 10V) RDS(ON) < 6.8mΩ (VGS = 10V) RDS(ON) < 8.2mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.3mH B IDSM IDM IAR EAR Power Dissipation TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 16.5 13.2 100 30 135 3.1 2.0 -55 to 150 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Units V V A A A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4706 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=1mA, VGS=0V IDSS IGSS VGS(...