Shenzhen SYS Semiconductors Co., LTD.
EB SERIES TRANSISTORS
FEATURES HIGH VOLTAGE CAPABILITY
HIGH SPEED SWITCHING
AP...
Shenzhen SYS Semiconductors Co., LTD.
EB SERIES
TRANSISTORS
FEATURES HIGH VOLTAGE CAPABILITY
HIGH SPEED SWITCHING
APPLICATION: FLUORESCENT LAMP
ELECTRONIC BALLAST
Product Specification
EB202
WIDE SOA
Absolute Maximum Ratings Tc=25°C
PARAMETER
SYMBOL VALUE
Collector-Base Voltage Collector-Emitter Voltage
Emitter- Base Voltage Collector Current
Total Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC PC Tj
600 400
9 1.0 12 150
Storage Temperature
Tstg -65-150
UNIT V V V A W °C °C
TO-92
Electronic Characteristics
CHARACTERISTICS Collector-Base Cutoff Current Collector-Emitter Cutoff Current
Collector-Emitter Voltage Emitter- Base Voltage
Tc=25°C
SYMBOL ICBO ICEO VCEO VEBO
Collector-Emitter Saturation Voltage Vcesat
Base-Emitter Saturation Voltage Vbesat
DC Current Gain
hFE
Storage Time Falling Time
tS tf
TEST CONDITION VCB=600V
VCE=400V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=0.2A,IB=0.04A IC=0.75A,IB=0.25A IC=0.2A,IB=0.04A VCE=5V,IC=1mA VCE=10V,IC=0.1A VCE=5V,IC=1A
VCC=5V, IC=0.1A, (UI9600)
MIN
400 9
7 10 5 2.0
MAX 100 250
0.30 0.50 1.2
40
UNIT A A V
V
V
V
4.5
µS 1.0
SYS semiconductors 2005.12
1
Shenzhen SYS Semiconductors Co., LTD.
EB SERIES
TRANSISTORS
Product Specification
EB202
Ic(A)
10
1
0.1
0.01
0.001 1
hFE
100
SOA (DC)
Vce(V)
10 100 1000
hFE - Ic
%
120
100
80
60
40
20
0 0
Pc Tj
IS/B Ptot
50 100 150 Tj( )200
hFE
100
hFE - Ic
Tj=125
Tj=25
10 Tj=− 40
Tj=125
Tj=25
10 Tj=− 40
Vce=1.5V
1 0.01
0.1
Ic(A)
1 10
Vces(v)
10
hFE=5
1
Vces ...