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K16A60W Dataheets PDF



Part Number K16A60W
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet K16A60W DatasheetK16A60W Datasheet (PDF)

MOSFETs Silicon N-Channel MOS (DTMOS) TK16A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK16A60W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rat.

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MOSFETs Silicon N-Channel MOS (DTMOS) TK16A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK16A60W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque (Tc = 25) (t = 1.0 s) (Note 1) (Note 1) (Note 2) (Note 1) (Note 1) VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg VISO(RMS) TOR 600 ±30 15.8 63.2 40 231 4.0 15.8 63.2 150 -55 to 150 2000 0.6 V A W mJ A  V Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2012-05 1 2013-12-25 Rev.4.0 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25 (initial), L = 25.3 mH, RG = 25 Ω, IAR = 4.0 A TK16A60W Symbol Rth(ch-c) Rth(ch-a) Max Unit 3.13 /W 62.5 Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2013-12-25 Rev.4.0 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol Test Condition IGSS IDSS V(BR)DSS Vth RDS(ON) VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 0.79 mA VGS = 10 V, ID = 7.9 A Min   600 2.7  6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Effective output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) MOSFET dv/dt ruggedness Symbol Ciss Crss Coss Co(er) rg tr ton tf toff dv/dt Test Condition VDS = 300 V, VGS = 0 V, f = 1 MHz VDS = 0 to 400 V, VGS = 0 V VDS = OPEN, f = 1 MHz See Figure 6.2.1 VDD = 0 to 400 V, ID = 7.9 A Min          50 TK16A60W Typ. Max Unit  ±1  10   3.7 0.16 0.19 µA V Ω Typ. Max Unit 1350  pF 4 35  55  6 Ω 25  ns 50  5 100    V/ns Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Symbol Test Condition Min Typ. Max Unit Qg VDD ≈ 400 V, VGS = 10 V, ID = 15.8 A  38  nC Qgs1 Qgd 9  16  6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified) Characteristics Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Diode dv/dt ruggedness Symbol Test Condition Min Typ. Max Unit VDSF IDR = 15.8 A, VGS = 0 V   -1.7 V trr IDR = 7.9 A, VGS = 0 V Qrr -dIDR/dt = 100 A/µs  280  ns  2.9  µC Irr  23  A dv/dt IDR = 7.9 A, VGS = 0 V, VDD = 400 V 15   V/ns 3 2013-12-25 Rev.4.0 7. Marking (Note) TK16A60W Fig. 7.1 Marking Note: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 4 2013-12-25 Rev.4.0 8. Characteristics Curves (Note) TK16A60W Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 VDSS - Ta Fig. 8.6 RDS(ON) - ID 5 2013-12-25 Rev.4.0 TK16A60W Fig. 8.7 RDS(ON) - Ta Fig. 8.8 IDR - VDS Fig. .


MCZ5303 K16A60W 2SK528


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