STD17N05 STD17N06
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STD17N05 STD17N06
VDSS 50 V 60 V
R DS( on) <...
STD17N05 STD17N06
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTOR
TYPE STD17N05 STD17N06
VDSS 50 V 60 V
R DS( on) < 0.085 Ω < 0.085 Ω
ID 17 A 17 A
s TYPICAL RDS(on) = 0.06 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE s APPLICATION ORIENTED
CHARACTERIZATION s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”) s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s
REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0) VDG R Drain- gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM() Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC
Derating Factor Tstg Storage Temperature Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
December 1996
3 2 1
IPAK TO-251 (Suffix ”-1”)
3 1
DPAK TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Val ue
STD17N05
STD17N06
50 60
50 60
± 20
17
12
68
55
0 .3 7
-65 to 175
175
Unit
V V V A A A W W/oC oC oC
1/10
STD17N05/STD17N06
THERMAL DATA
Rthj-case Rthj- amb Rt hc- sin k
Tl
Thermal Resi...