DatasheetsPDF.com

IRL3803V Dataheets PDF



Part Number IRL3803V
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRL3803V DatasheetIRL3803V Datasheet (PDF)

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient .

  IRL3803V   IRL3803V



Document
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient www.irf.com PD - 94734 IRL3803V HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 5.5mΩ ID = 140A‡ S TO-220AB Max. 140‡ 110 470 200 1.4 ± 16 71 20 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V A mJ V/ns °C Typ. ––– 0.50 ––– Max. 0.74 ––– 62 Units °C/W 1 7/21/03 IRL3803V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) VGS(th) gfs Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. Typ. Max. Units 30 ––– ––– V ––– 0.028 ––– V/°C ––– ––– 5.5 mΩ ––– ––– 7.5 1.0 ––– ––– V 82 ––– ––– S ––– ––– 25 µA ––– ––– 250 ––– ––– 100 nA ––– ––– -100 ––– ––– 76 ––– ––– 19 nC ––– ––– 35 ––– 16 ––– ––– 180 ––– ––– 29 ––– ––– 37 ––– LD Internal Drain Inductance LS Internal Source Inductance ––– 4.5 ––– ––– 7.5 ––– nH Ciss Input Capacitance ––– 3720 ––– Coss Output Capacitance ––– 1480 ––– Crss Reverse Transfer Capacitance ––– 270 ––– EAS Single Pulse Avalanche Energy‚ ––– 1560…400† Source-Drain Ratings and Characteristics pF mJ Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 71A „ VGS = 4.5V, ID = 59A „ VDS = VGS, ID = 250µA VDS = 25V, ID = 71A„ VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 150°C VGS = 16V VGS = -16V ID = 71A VDS = 24V VGS = 4.5V, See Fig. 6 and 13 VDD = 15V ID = 71A RG = 1.3Ω VGS = 4.5V, See Fig. 10 „ Between lead, 6mm (0.25in.) from package G and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 IAS = 71A, L = 0.16mH D S Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time Min. Typ. Max. Units Conditions ––– ––– 140‡ ––– ––– 470 A MOSFET symbol showing the integral reverse p-n junction diode. G D S ––– ––– 1.2 V TJ = 25°C, IS = 71A, VGS = 0V „ ––– 52 78 ns TJ = 25°C, IF = 71A ––– 91 140 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) ‚ Starting TJ = 25°C, L = 160µH RG = 25Ω, IAS = 71A, VGS=10V (See Figure 12) ƒ ISD ≤ 71A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 400µs; duty cycle ≤ 2%. … This is a typical value at device destruction and represents operation outside rated limits. † This is a calculated value limited to TJ = 175°C . ‡ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 2 www.irf.com I D, Drain-to-Source Current (A) IRL3803V 1000 VGS TOP 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V 100 10 0.1 2.7V 20µs PULSE WIDTH TJ= 25 °C 1 10 VDS , Drain-to-Source Voltage (V) 100 Fig 1. Typical Output Characteristics I D, Drain-to-Source Current (A) 1000 VGS TOP 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V 100 2.7V 10 0.1 20µs PULSE WIDTH TJ= 175 °C 1 10 VDS , Drain-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) 1000 100 TJ = 25 °C TJ = 175°C 10 2.5 V DS= 15V 20µs PULSE WIDTH 3.5 4.5 5.5 6.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Ch.


STW36NM60N IRL3803V BIT1628A


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)