Document
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
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Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
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PD - 94734
IRL3803V
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 5.5mΩ ID = 140A
S
TO-220AB
Max. 140 110 470 200
1.4 ± 16 71 20 5.0 -55 to + 175
300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A
W W/°C
V A mJ V/ns
°C
Typ. ––– 0.50 –––
Max. 0.74 ––– 62
Units °C/W
1 7/21/03
IRL3803V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th) gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage Forward Transconductance
IDSS
IGSS
Qg Qgs Qgd td(on) tr td(off) tf
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Min. Typ. Max. Units 30 ––– ––– V ––– 0.028 ––– V/°C ––– ––– 5.5 mΩ ––– ––– 7.5 1.0 ––– ––– V 82 ––– ––– S ––– ––– 25 µA ––– ––– 250 ––– ––– 100
nA ––– ––– -100 ––– ––– 76 ––– ––– 19 nC ––– ––– 35 ––– 16 ––– ––– 180 ––– ––– 29 ––– ––– 37 –––
LD Internal Drain Inductance LS Internal Source Inductance
––– 4.5 ––– ––– 7.5 –––
nH
Ciss Input Capacitance
––– 3720 –––
Coss
Output Capacitance
––– 1480 –––
Crss Reverse Transfer Capacitance
––– 270 –––
EAS
Single Pulse Avalanche Energy
––– 1560
400
Source-Drain Ratings and Characteristics
pF mJ
Conditions
VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 71A VGS = 4.5V, ID = 59A VDS = VGS, ID = 250µA VDS = 25V, ID = 71A VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 150°C VGS = 16V VGS = -16V ID = 71A VDS = 24V VGS = 4.5V, See Fig. 6 and 13 VDD = 15V ID = 71A RG = 1.3Ω VGS = 4.5V, See Fig. 10 Between lead,
6mm (0.25in.)
from package
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and center of die contact
VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5
IAS = 71A, L = 0.16mH
D S
Parameter IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 140 ––– ––– 470
A
MOSFET symbol showing the integral reverse p-n junction diode.
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D S
––– ––– 1.2 V TJ = 25°C, IS = 71A, VGS = 0V
––– 52 78 ns TJ = 25°C, IF = 71A ––– 91 140 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 160µH RG = 25Ω, IAS = 71A, VGS=10V (See Figure 12)
ISD ≤ 71A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits. This is a calculated value limited to TJ = 175°C . Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
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I D, Drain-to-Source Current (A)
IRL3803V
1000
VGS TOP 15V
10V 4.5V
3.7V 3.5V
3.3V 3.0V
BOTTOM 2.7V
100
10 0.1
2.7V
20µs PULSE WIDTH TJ= 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
I D, Drain-to-Source Current (A)
1000
VGS
TOP 15V 10V 4.5V
3.7V 3.5V
3.3V 3.0V BOTTOM 2.7V
100
2.7V
10 0.1
20µs PULSE WIDTH TJ= 175 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
I D, Drain-to-Source Current (A)
1000 100
TJ = 25 °C TJ = 175°C
10 2.5
V DS= 15V 20µs PULSE WIDTH
3.5 4.5 5.5 6.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Ch.