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K3869
2SK3869
Description
2SK3869 www.DataSheet4U.com TOSHIBA Field Effect
Transistor
Silicon N-Channel MOS Type (π-MOSVI) 2SK3869 Switching
Regulator
Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 450 V) Enhancement model: Vth = 2.0 to 4.0 V (VD...
Toshiba Semiconductor
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