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K3869 Dataheets PDF



Part Number K3869
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SK3869
Datasheet K3869 DatasheetK3869 Datasheet (PDF)

2SK3869 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3869 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 450 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Drain-gate voltage (.

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ICR18650-26H K3869 SFW045XS1-R


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