STW23NM50N

STB23NM50N, STF23NM50N STP23NM50N, STW23NM50N N-channel 500 V, 0.162 Ω, 17 A TO-220, TO-220FP, TO-247, D²PAK MDmesh™ II Power MOSFET Features Order codes STB23NM50N STF23NM50N STP23NM50N STW23NM50N VDSS (@Tjmax) 550 V RDS(on) max. < 0.19 Ω ID 17 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 3 1 D²PAK Figure 1. Internal schematic diagram $ ' 3 Table 1. Device summary Order codes STB23NM50N STF23NM50N STP23NM50N STW23NM50N Marking 23NM50N Package D²PAK TO-220FP TO-220 TO-247 !-V Packaging Tape and reel Tube May 2011 Doc ID 16913 Rev 4 1/21 www.st.com 21 Contents Contents STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....