CPH6355

CPH6355 Power MOSFET –30V, 169mΩ, –3A, Single P-Channel www.onsemi.com Features Low ON-Resistance 4V Drive Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS −30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID −3 A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP −12 A Power Dissipation When mounted on ceramic substrate (1500mm2 × 0.8mm) Junction Temperature PD Tj 1.6 W 150 °C Storage Temperature Tstg −55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (1500mm2 × 0.8mm) Symbol RθJA Value Unit 78.1 °C/W VDSS −30V RDS(on) Max 169mΩ@ −10V 276mΩ@ −4.5V 313mΩ@ −4V ID Max −3A Electrical Connection P-Channel 1, 2, 5, 6 1 : Drain 3 2 : Drain 3 : Gate 4 : Source 5 : Drain 4 6 : Drain Packing Type : TL Marking TL Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. XF LOT No. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 3 1 Publication Order Number : CPH6355/D Electrical Characteristics at Ta =...