MCH3479

MCH3479 Power MOSFET 20V, 64mΩ, 3.5A, Single N-Channel www.onsemi.com Features Low On-Resistance 1.8V Drive ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance VDSS 20V RDS(on) Max 64mΩ@ 4.5V 95mΩ@ 2.5V 149mΩ@ 1.8V ID Max 3.5A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) PD Junction Temperature Tj Storage Temperature Tstg Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (900mm2 × 0.8mm) Symbol RθJA Value 20 ±12 3.5 14 Unit V V A A 0.9 150 −55 to +150 W °C °C Value Unit 138.8 °C/W Electrical Connection N-Channel 3 1 1 : Gate 2 : Source 3 : Drain 2 Packing Type : TL Marking FL TL LOT No. LOT No. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 1 1 Publication Order Number : MCH3479/D Electrical Characteristics at Ta = 25°C Parameter Symbol Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Cur...