MCH3382

Ordering number : ENA1766 MCH3382 SANYO Semiconductors DATA SHEET MCH3382 P-Channel Silicon MOSFET Low Votage Drive Switching Device Applications Features ON-resistance RDS(on)1=152mΩ (typ.) 1.2V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings --12 ±9 --2 --8 0.8 150 --55 to +150 Unit V V A A W °C °C 2.1 1.6 0.25 Package Dimensions unit : mm (typ) 7019A-003 MCH3382-TL-H 2.0 0.15 3 0 t o 0.02 Product & Package Information Package : MCPH3 JEITA, JEDEC : SC-70, SOT-323 Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking QP LOT No. LOT No. 12 0.65 0.3 TL Electrical Connection 0.85 0.25 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 3 1 0.07 2 http://semicon.sanyo.com/en/network 61310PE TKIM TC00002668 No. A1766-1/7 MCH3382 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitan...