MCH3375

MCH3375 Power MOSFET –30V, 295mΩ, –1.6A, Single P-Channel www.onsemi.com Features On-Resistance RDS(on)1=227mΩ (typ) 4V Drive High Speed Switching and Low Loss Pb-Free, Halogen Free and RoHS Compliance VDSS –30V RDS(on) Max 295mΩ@ –10V 523mΩ@ –4.5V 609mΩ@ –4V ID Max –1.6A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS –30 V Gate to Source Voltage Drain Current (DC) VGSS ID ±20 –1.6 V A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP –6.4 A Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) Junction Temperature PD Tj 0.8 W 150 °C Storage Temperature Tstg −55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (900mm2 × 0.8mm) Symbol RθJA Value Unit 156.25 °C/W Electrical Connection P-Channel 3 1 1 : Gate 2 : Source 3 : Drain 2 Packing Type:TL Marking QG TL LOT No. LOT No. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 February 2015 - Rev. 2 1 Publication Order Number : MCH3375/D Electr...